Effect of the Gate Dielectric Layer of Flexible InGaZnO Synaptic Thin-Film Transistors on Learning Behavior

Autor:	Shinyoung Park, Hyungjin Kim, Yeongjin Hwang, Dae Hwan Kim, Hyunkyu Lee, Woo Sik Choi, Dongyeon Kang, Changwook Kim, Jun Tae Jang
Rok vydání:	2021
Předmět:	Materials science business.industry Thin-film transistor Gate dielectric Materials Chemistry Electrochemistry Optoelectronics business Layer (electronics) Learning behavior Electronic Optical and Magnetic Materials
Zdroj:	ACS Applied Electronic Materials. 3:3972-3979
ISSN:	2637-6113
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c33b69729797f58a5c0281b78b1f9c41 https://doi.org/10.1021/acsaelm.1c00517 Zobrazit plný text záznamu