Memory effect and its switching by electric field in solid-state gas sensors

Autor:	Marina Rumyantseva, Roman B. Vasiliev, B. A. Akimov, Michel Langlet, Alexander Gaskov, Ludmila I. Ryabova, M. Labeau
Rok vydání:	2000
Předmět:	Materials science business.industry Mechanical Engineering Process (computing) Solid-state Heterojunction Condensed Matter Physics Capacitance Mechanics of Materials Electric field Molecule Optoelectronics Polar General Materials Science Sensitivity (control systems) business
Zdroj:	Materials Science and Engineering: B. 77:106-109
ISSN:	0921-5107
DOI:	10.1016/s0921-5107(00)00479-7
Popis:	The Au/n-SnO2/SiO2/p-Si/Al heterostructures were grown using aerosol-gel and spray pyrolysis methods. The effect of capacitance memory was discovered in the presence of polar gas molecules: C2H5OH, NH3, H2O. The mechanism of gas sensitivity, capacitance memory and its switching was associated with the process taking place on the SnO2/SiO2 interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c3386d1e0aad3799fba160c8e6b91517 https://doi.org/10.1016/s0921-5107(00)00479-7 Zobrazit plný text záznamu Full Text from ScienceDirect