Synthesis, characterization and photo-response of p-type cupric oxide thin films prepared by sol-gel technique
| Autor: | S. Dolai, Rajkumar Dey, Radhaballav Bhar, Sajjad Hussain, Arun Kumar Pal |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Open-circuit voltage Annealing (metallurgy) Mechanical Engineering Analytical chemistry Oxide 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences chemistry.chemical_compound chemistry Mechanics of Materials 0103 physical sciences General Materials Science Fill factor Crystallite Thin film 0210 nano-technology Current density Sol-gel |
| Zdroj: | Materials Science and Engineering: B. :153-161 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/j.mseb.2018.11.022 |
| Popis: | Cupric oxide (CuO) has been deposited onto glass and n-Si (1 0 0) substrate by sol-gel technique. pH of the sol and annealing temperature during film growth were found to be the key parameters for depositing the above film. Microstructural, optical and bonding environmental studies were performed on the above films. The grain sizes in these polycrystalline films varied between ∼50 and 100 nm. Films were preferentially oriented in (−1 1 1) direction. Electrical and galvanomagnetic measurements indicated films to be predominantly p-type with carrier concentration value ∼3.47 × 1015/cm3 and mobility values ∼4.475 cm2/Vs. A typical p-CuO/n-Si hetero-junction structure has been successfully fabricated with open circuit voltage (VOC) ∼359 mV and short-circuits current density (JSC) ∼4.65 mA/cm2, fill factor (FF) ∼0.38 and efficiency (η) ∼1.05%. |
| Databáze: | OpenAIRE |
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