The wetting of self-bonded polycrystalline silicon carbide by silicon
| Autor: | V. L. Yupko, T. I. Kuz'mina, Yu. P. Dyban, I. E. Polomoshnov, G. G. Gnesin, Z. V. Sichkar |
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| Rok vydání: | 1977 |
| Předmět: |
chemistry.chemical_classification
Range (particle radiation) Materials science Silicon Base (chemistry) Metals and Alloys chemistry.chemical_element Condensed Matter Physics Contact angle Hysteresis chemistry.chemical_compound chemistry Mechanics of Materials Materials Chemistry Ceramics and Composites Surface roughness Silicon carbide Wetting Composite material |
| Zdroj: | Soviet Powder Metallurgy and Metal Ceramics. 16:860-862 |
| ISSN: | 1573-9066 0038-5735 |
| DOI: | 10.1007/bf00797043 |
| Popis: | 1. It is shown that in the wetting of silicon carbide materials by silicon the value ofφin in the range Rz = 0.1–7μ is independent of the surface roughness of the base plate. 2. With increase in surface roughness contact angle hysteresis at first, in the range Rz = 0.1–0.5p, grows and then remains unchanged. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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