Screen-Printed Aluminium Contacts on n+-Doped Silicon
| Autor: | Suzuki, S., Peng, Z.-W., Tsuji, K., Nakahara, M., Morishita, N., Kuroki, T., Adrian, A., Dhamrin, M., Buck, T. |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20202020-2dv.3.36 |
| Popis: | 37th European Photovoltaic Solar Energy Conference and Exhibition; 542-544 In this paper the conditions for forming contacts to n+-Si using a low-cost aluminium (Al) thick film paste material and screen printing technique in combination with conventional high temperature belt furnace sintering were investigated. The test structures feature a tunneling oxide layer below a n+ polycrystalline silicon (poly-Si)/silicon nitride (SiNx) stack. The n+ poly-Si layer was modified resulting in three different surface doping concentrations (ND). After line-shaped laser contact openings (LCOs), the Al paste was printed in a grid pattern on top of the LCOs and fired with various temperature settings. Thereafter, the contact resistivity (c) for each variation was measured by TLM. As a result, it was confirmed that the c is greatly affected by ND. In the same time, it was found that the peak firing temperature has less impact on the c than ND. However, J0, Met of the lowest c sample was high for a passivated contact. In addition, screen-printed Al metallisation on both sides of a n-PERT front junction solar cell was fabricated and characterized. |
| Databáze: | OpenAIRE |
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