High-performance quasi-optical GaAs monolithic mixer at 110 GHz

Autor: R. A. Murphy, I.H. Mroczkowski, G.D. Alley, B. J. Clifton
Rok vydání: 1981
Předmět:
Zdroj: IEEE Transactions on Electron Devices. 28:155-157
ISSN: 0018-9383
DOI: 10.1109/t-ed.1981.20302
Popis: A novel GaAs monolithic integrated circuit mixer has been fabricated which is impedance matched to fundamental waveguide. It consists of a slot coupler, coplanar transmission line, surface-oriented Schottky-barrier diode, and RF bypass capacitor monolithically integrated on the GaAs surface. At 110 GHz, a monolithic mixer module mounted in the end of a waveguide horn has an uncooled double-sideband (DSB) mixer noise temperature of 339 K and conversion loss of 3.8 dB.
Databáze: OpenAIRE