Cobalt deposition in porous silicon by chemical vapour infiltration and deposition; the effects of precursor instability
| Autor: | T Giaddui, L.G. Earwaker, B.J. Aylett, K.S. Forcey, I.S. Harding |
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| Rok vydání: | 1996 |
| Předmět: |
inorganic chemicals
Silicon Hydrogen Hydride Organic Chemistry Inorganic chemistry Thermal decomposition chemistry.chemical_element Porous silicon Biochemistry Inorganic Chemistry chemistry Chemical vapor infiltration Materials Chemistry Physical and Theoretical Chemistry Cobalt Deposition (chemistry) |
| Zdroj: | Journal of Organometallic Chemistry. 521:33-37 |
| ISSN: | 0022-328X |
| DOI: | 10.1016/0022-328x(96)06238-9 |
| Popis: | Cobalt has been deposited on and in porous silicon by chemical vapour infiltration and deposition using deuterated cobalt carbonyl hydride, DCo(CO) 4 . This precursor is unstable, and below about 22°C decomposes with an initial half-life of 10 min, probably forming DCo 3 (CO) 9 . After a time which depends on the precursor concentration, the precursor decomposes more rapidly. This reaction increases the concentration of cobalt and the ratio of cobalt to hydrogen within the pores. At temperatures above about 22°C, a similar but smaller increase occurs in the concentration of cobalt, and Co 2 (CO) 8 is thought then to be the main decomposition product. Thermolysis preserves the increased levels of metal within the pores; it is inferred that each cobalt atom becomes linked to one silicon atom at the pore wall. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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