Quantized Hall effect in disordered GaAs layers with 3D spectrum in tilted magnetic fields

Autor: Isabelle Claus, Aloysius G. M. Jansen, S. S. Murzin
Rok vydání: 1998
Předmět:
Zdroj: Journal of Experimental and Theoretical Physics Letters. 68:327-331
ISSN: 1090-6487
0021-3640
DOI: 10.1134/1.567868
Popis: The quantum Hall effect structure in the transverse magnetoresistance Rxx and the Hall resistance Rxy of heavily doped GaAs layers with a three-dimensional spectrum of the charge carriers is investigated for different field orientations. The characteristic structures (minima in Rxx and plateaus in Rxy) shift much more slowly to higher fields and are suppressed much more rapidly in comparison with the expected angular dependence for a two-dimensional system. The results are discussed in terms of the anisotropic change of the three-dimensional conductivity tensor with magnetic field rotation.
Databáze: OpenAIRE