| Autor: |
Gang Seok Lee, Sam Nyung Yi, Min Jeong Shin, Ji Young Kim, Nobuhiko Sawaki, Young Moon Yu, Hyung Soo Ahn, Min Yang, Min Ah Park, Hun Soo Jeon, Hee Shin Kang, Suck-Whan Kim, Hyo Suk Lee |
| Rok vydání: |
2013 |
| Předmět: |
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| Zdroj: |
Journal of the Korean Crystal Growth and Crystal Technology. 23:213-217 |
| ISSN: |
1225-1429 |
| DOI: |
10.6111/jkcgct.2013.23.5.213 |
| Popis: |
The GaN layer was typical III-V nitride semiconductor and was grown on the sapphire substrate which cheap and convenient. However, sapphire substrate is non-conductivity, low thermal conductivity and has large lattice mismatch with the GaN layer. In this paper, the poly GaN epilayer was grown by HVPE on the metallic compound graphite substrate with good heat dissipation, high thermal and electrical conductivity. We tried to observe the growth mechanism of the GaN epilayer grown on the amorphous metallic compound graphite substrate. The HCl and gas were flowed to grow the GaN epilayer. The temperature of source zone and growth zone in the HVPE system was set at and , respectively. The GaN epilayer grown on the metallic compound graphite substrate was observed by SEM, EDS, XRD measurement. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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