Device simulation of negative-capacitance field-effect transistors with a uniaxial ferroelectric gate insulator

Autor:	Hiroyuki Ota, Koichi Fukuda, Junichi Hattori, Shinji Migita, Tsutomu Ikegami, Hidehiro Asai
Rok vydání:	2020
Předmět:	Materials science business.industry Gate insulator Optoelectronics Field-effect transistor Device simulation business Ferroelectricity Negative impedance converter
Zdroj:	Nonlinear Theory and Its Applications, IEICE. 11:145-156
ISSN:	2185-4106
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c306671d4248cf11d1c6347446b3362f https://doi.org/10.1587/nolta.11.145 Zobrazit plný text záznamu