A 24-GHz low-noise amplifier co-designed with ESD protection using junction varactors in 65-nm RF CMOS

Autor:	M. H. Tsai, S. H. Hsu, F. L. Hsueh, C. P. Jou, T. J. Yeh, J. D. Jin, H. H. Hsieh
Rok vydání:	2011
Zdroj:	2011 IEEE MTT-S International Microwave Symposium.
DOI:	10.1109/mwsym.2011.5973362
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c303df1370146586bdbabf78860a4f56 https://doi.org/10.1109/mwsym.2011.5973362 Zobrazit plný text záznamu