Scaling the SiGe channel pmetal–oxide–semiconductor field effect transistor: The case for p+SiGe gates

Autor:	N. G. Tarr, D. M. Wong
Rok vydání:	2000
Předmět:	Materials science business.industry Semiconductor materials Crossover Nanotechnology Surfaces and Interfaces Condensed Matter Physics Surfaces Coatings and Films Oxide semiconductor MOSFET Optoelectronics Field-effect transistor business Scaling Communication channel Voltage
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:783-786
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.582180
Popis:	A theoretical study of the scalability of the SiGe channel pmetal–oxide–semiconductor field effect transistor to the 0.1 μm generation is presented. Devices with n+ polysilicon gates, p+ polysilicon gates, and intermediate workfunction p+ SiGe gates were considered. It was found that short channel effects became severe in the n+ gated device for channel lengths below 0.15 μm. The p+ gated device provided excellent short channel behavior, but suffered from a very poor crossover voltage. The best compromise between short channel effects and crossover voltage was obtained with the p+ SiGe gate, which gave −VCROSS close to VDD and VDIBL≈98 mV in the 0.1 μm generation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c303286bacb41fa274bf4048eb66f827 https://doi.org/10.1116/1.582180 Zobrazit plný text záznamu