Optical studies of MOVPE-grown GaN layers

Autor:	R. Korbutowicz, M. Panek, Regina Paszkiewicz, Jan Misiewicz, Marek Tłaczała, M. Ciorga, Leszek Bryja, Bartłomiej Paszkiewicz, I. Trabjerg, Krzysztof Jezierski
Rok vydání:	1999
Předmět:	Photoluminescence business.industry Optical engineering Analytical chemistry Gallium nitride Reflectivity law.invention chemistry.chemical_compound chemistry law Optoelectronics Metalorganic vapour phase epitaxy business Luminescence Light-emitting diode
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.344728
Popis:	Photoluminescence and reflectance studies of MOVPE grown GaN samples were performed. From reflectance measurements optical constants were calculated by means of Kramers-Kronig analysis in the energy region 0 divided by 6 eV.© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Databáze:	OpenAIRE
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