Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers

Autor:	J. O. Chu, D. B. Aubertine, Ann F. Marshall, M. A. Mander, Nevran Ozguven, Paul C. McIntyre, P. M. Mooney
Rok vydání:	2002
Předmět:	Diffraction Materials science Solid-state physics Condensed matter physics Silicon Superlattice Diffusion fungi Enthalpy General Physics and Astronomy chemistry.chemical_element Crystallography chemistry X-ray crystallography Relaxation (physics)
Zdroj:	Journal of Applied Physics. 92:5027-5035
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.1508424
Popis:	X-ray diffraction is used to probe interdiffusion in asymmetrically strained, low concentration Si/SiGe superlattices. The results are shown to be in good agreement with a model developed from literature data for Ge diffusion in SiGe alloys. Using this model, it is shown that the initial fast interdiffusion frequently observed in Si/SiGe superlattices results primarily from the concentration dependence of the activation enthalpy for SiGe interdiffusion. Time dependent strain relaxation is shown to play a discernible, but secondary role in the transition from fast to slow interdiffusion. The linear proportionality constant relating the activation enthalpy of SiGe interdiffusion to biaxial strain is found to be ∼19 eV/unit strain.
Databáze:	OpenAIRE
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