InGaAs/InP avalanche photodiode arrays for eye-safe three-dimensional imaging
| Autor: | Marshall J. Cohen, Tara J. Martin, Wei Huang, John Christopher Dries, Michael J. Lange |
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| Rok vydání: | 2003 |
| Předmět: |
Physics
Avalanche diode Physics::Instrumentation and Detectors business.industry Avalanche photodiode Photodiode law.invention chemistry.chemical_compound Responsivity Readout integrated circuit Optics chemistry Single-photon avalanche diode law Optoelectronics Breakdown voltage business Indium gallium arsenide |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| Popis: | We report on recent progress in developing 2-dimensional arrays of InGaAs/InP avalanche photodiodes. Advances in compound semiconductor epitaxy and device processing technologies enable large (128x128) element focal plane arrays with breakdown voltage standard deviations < 0.3%. The uniformity in breakdown voltage simplifies readout integrated circuit designs, in that a single bias voltage may be used for all elements in the array. Each element in the array achieves responsivities greater than 10 A/W at a wavelength of 1550 nm, while maintaining dark currents less than 20 nA. The APD arrays stand to enable new cameras for such applications as three-dimensional imaging, and various other laser radar and communications systems. In particular, the improved responsivity of avalanche photodiodes over their pin photodiode counterparts can improve sensitivities by as much as 6 - 10 dB depending upon the readout integrated circuit bandwidth. So-called "flash" laser radar systems wherein a single high energy laser pulse is used to image a target require the extra sensitivity afforded by avalanche photodiodes due to the low return photon count from distant targets. |
| Databáze: | OpenAIRE |
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