Reduction of Local Thermal Effects in FinFETs With a Heat-Path Design Methodology
| Autor: | Minhyun Jin, Soo Youn Kim, Young Lee |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science Silicon Oscillation business.industry chemistry.chemical_element 01 natural sciences Temperature measurement Electronic Optical and Magnetic Materials Planar Parasitic capacitance chemistry 0103 physical sciences Thermal Optoelectronics Field-effect transistor Junction temperature Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 42:461-464 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | In this letter, we propose a heat-path design for releasing heat confined in FinFETs. Conductive material stacks consisting of metals and vias on silicon can be good heat paths that lower junction temperature. However, they also increase parasitic capacitance, leading to degraded circuit performance. Therefore, we analyzed the impact of various heat paths with different metal stacks and locations on junction temperature, power consumption, and oscillation frequency of ring oscillators. Measurements of the oscillators showed that the optimized heat-path design had a 24.9%-lower change in junction temperature and a 1.53% higher oscillation frequency compared to a conventional layout. Furthermore, from thermally aware-compact model simulation results, we show that the proposed heat-path methodology can be more effective with the FinFET process than with the planar CMOS process. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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