Red lasers grown by all-solid-source molecular beam epitaxy
| Autor: | M. Pessa, Mika Toivonen, R.F. Nabiev, M. Jansen, P Corvini, Pekka Savolainen |
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| Rok vydání: | 1999 |
| Předmět: |
Range (particle radiation)
Chemistry business.industry Slope efficiency Spectral bands Condensed Matter Physics Laser Electronic Optical and Magnetic Materials law.invention Wavelength Optics law Materials Chemistry Continuous wave Electrical and Electronic Engineering business Quantum well Molecular beam epitaxy |
| Zdroj: | Semiconductor Science and Technology. 14:425-429 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | We have prepared high-power 600 nm spectral band quantum well lasers using all-solid-source molecular beam epitaxy for layer growth. An output power up to 3 W in continuous wave mode has been demonstrated at the nominal wavelength of 670 nm, 2 W at 650 nm and 1 W at 630 nm. The threshold current densities are 350- for nm, 500- for nm and less than for nm. The characteristic temperature of threshold current falls within the range of K at nm and is about 60 K at nm. The slope efficiency is between 0.50 and 0.58 W per facet for uncoated devices of 1 mm in cavity length. Maximum observed wall-plug efficiencies are between 30 and 48% for mirror coated lasers. Preliminary lifetests have been carried out for the 650 and 670 nm lasers suggesting that these lasers will be quite reliable in operation. |
| Databáze: | OpenAIRE |
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