| Autor: |
T. Ivanov, Luc T. Wille, V. Valtchinov |
| Rok vydání: |
1994 |
| Předmět: |
|
| Zdroj: |
Solid State Communications. 89:637-642 |
| ISSN: |
0038-1098 |
| DOI: |
10.1016/0038-1098(94)90180-5 |
| Popis: |
The resonant tunneling under an a.c. bias superimposed on a d.c. voltage through a semiconducting quantum dot is investigated. A single resonant level is considered with Coulomb repulsion between electrons with opposite spins taken into account. Using the irreducible Green's functions method in the Keldysh non-equilibrium form, the propagator of the electrons in the well is obtained for the case of nonzero d.c. bias, assuming that transient processes due to the sudden switching-on of the d.c. bias have decayed. The possibility of a Kondo peak appearing in the density of states is discussed. The conductance and the energy losses of the two-barrier system are calculated in the linear-response formalism. The results are interpreted from the viewpoint of the energy spectrum of the well electrons which reflects the electron correlations (the finite value of the Coulomb repulsion). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
