Memory effect of ZnO nanocrystals embedded in an insulating polyimide layer

Autor:	Yong Hyup Kim, T. W. Kim, H. G. Roh, Jeong-Gi Jin, J. H. Jung, In Mook Lee
Rok vydání:	2006
Předmět:	Materials science Physics and Astronomy (miscellaneous) Electron diffraction business.industry Transmission electron microscopy Wide-bandgap semiconductor Nanoparticle Optoelectronics Selected area diffraction business Layer (electronics) Polyimide Nanocrystalline material
Zdroj:	Applied Physics Letters. 88:112107
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.2185615
Popis:	The memory effects of ZnO nanoparticles embedded in a polyimide (PI) matrix were investigated. Transmission electron microscopy images and selected area electron diffraction patterns showed that ZnO nanocrystals were created inside the PI layer. Capacitance-voltage (C-V) measurements on Al/PI/nanocrystalline ZnO∕PI∕p-Si structures at 300K showed a metal-insulator-semiconductor behavior with a flatband voltage shift due to the existence of the ZnO nanocrystals, indicative of trapping, storing, and emission in the electrons in the ZnO nanocrystals. Possible electronic structures corresponding to the writing and erasing operations for the Al/PI/nanocrystalline ZnO∕PI∕p-Si device are described on the basis of the C-V results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c2df8ee677ef5fd92a27261be336ac7d https://doi.org/10.1063/1.2185615 Zobrazit plný text záznamu