Performance and reliability improvements in poly-Si TFT's by fluorine implantation into gate poly-Si

Autor:	Takashi Ipposhi, M. Ashida, S. Maeda, Hisayuki Nishimura, Shigeto Maegawa, Y. Inoue, O. Tanina, T. Ichiki, T. Nishimura, Natsuro Tsubouchi
Rok vydání:	1995
Předmět:	Materials science Passivation Silicon Analytical chemistry chemistry.chemical_element Time-dependent gate oxide breakdown Electronic Optical and Magnetic Materials Ion implantation chemistry Gate oxide Thin-film transistor MOSFET Fluorine Electrical and Electronic Engineering
Zdroj:	IEEE Transactions on Electron Devices. 42:1106-1112
ISSN:	0018-9383
DOI:	10.1109/16.387244
Popis:	High-performance and high-reliability TFT's have been obtained using a fluorine ion implantation technique. The fluorine implantation into the gate poly-Si of TFT caused a positive Vth shift, increased the ON current, and decreased the leakage current significantly. Our investigation indicates that the Vth shift originates from negative charges generated in the gate oxide by the fluorine implantation. The improvement of drain current is attributed to fluorine passivation of trap states in the poly-Si and to a modulation of offset potential due to the same negative charges under the offset region. Furthermore, high immunity against the -BT stress and TDDB of the gate oxide was achieved by the fluorine implantation. It is considered that the strong Si-F bonds created by the fluorine implantation raise the stress immunity. >
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c2dd4505c7fb136e67079a1c249ce938 https://doi.org/10.1109/16.387244 Zobrazit plný text záznamu