The oxidation behaviour of two- and three-dimensional C/SiC thermostructural materials protected by chemical-vapour-deposition polylayers coatings
| Autor: | S. Goujard, H. Tawil, Lionel Vandenbulcke |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Silicon Mechanical Engineering chemistry.chemical_element Boron carbide Chemical vapor deposition Atmospheric temperature range Characterization (materials science) BORO chemistry.chemical_compound chemistry Mechanics of Materials General Materials Science Composite material Boron Layer (electronics) |
| Zdroj: | Journal of Materials Science. 29:6212-6220 |
| ISSN: | 1573-4803 0022-2461 |
| DOI: | 10.1007/bf00354562 |
| Popis: | The oxidation behaviour of two- and three-dimensional C/SiC protected by a chemicalvapour-deposition (CVD) ceramic coating was studied. The elements used to achieve the surface protection were silicon, boron and carbon, preferably forming SiC, B or B4C. The best results were obtained with the trilayer coatings, that is with, SiC as the internal layer, boron or boron carbide, as the intermediate layer and an external SiC layer. To get a good protection in a large temperature range, from 450 to 1500 °C, the total thickness of the trilayers must be higher than 160 μm and the intermediate layer thickness must be higher than 5 μm. Morphological characterization of oxidized samples has shown that, for intermediate oxidation temperatures, a glass was produced in the cracks. When the oxidation temperature was equal to or higher than 1300 °C, sealing of the cracks was rarely observed, but the oxidation resistance remained satisfactory. |
| Databáze: | OpenAIRE |
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