Quantum interference effects in titanium nitride films at low temperatures
| Autor: | Manosi Roy, Rahul Ponnam, Panupong Jaipan, Sergey Yarmolenko, Nikhil Reddy Mucha, Dhananjay Kumar, Onome Scott-Emuakpor, A. K. Majumdar |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Range (particle radiation) Materials science Condensed matter physics Metals and Alloys 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences Titanium nitride Surfaces Coatings and Films Electronic Optical and Magnetic Materials Magnetic field Maxima and minima chemistry.chemical_compound chemistry Tin thin films Electrical resistivity and conductivity 0103 physical sciences Quantum interference Materials Chemistry 0210 nano-technology |
| Zdroj: | Thin Solid Films. 681:1-5 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2019.05.005 |
| Popis: | Detailed electrical resistivity (ρ) measurements have been carried out in epitaxial TiN thin films in the temperature (T) range of 4 ≤ T ≤ 300 K in magnetic fields from 0 to 6 T. The ρ (T) data show distinct minima around 38 K, which remains unaffected by the external magnetic fields. At higher temperatures (100−300K), the ρ(T) behavior was found to be linear in agreement with classical electron-phonon interactions (∝T). Below the minima, the ρ(T) is unequivocally described by the quantum interference effect (∝ − T ). The value of the coefficient of the T term matches well with the near-universal value. |
| Databáze: | OpenAIRE |
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