Characterization of Tunneling Current Through Ultrathin Silicon Dioxide Films by Different-Metal Gates Method

Autor: Takaaki Hirokane, Naoto Yoshii, Tatsuya Okazaki, Shinichi Urabe, Kazuo Nishimura, Satoru Morita, Mizuho Morita
Rok vydání: 2006
Zdroj: ECS Meeting Abstracts. :749-749
ISSN: 2151-2043
DOI: 10.1149/ma2005-02/19/749
Popis: not Available.
Databáze: OpenAIRE