Technology for forming micro devices based on gallium nitride

Autor:	B. I. Seleznev, A. V. Zhelannov, D. G. Fedorov
Rok vydání:	2020
Předmět:	Micro devices chemistry.chemical_compound Materials science chemistry Gallium nitride Nanotechnology
Zdroj:	IOP Conference Series: Materials Science and Engineering. 939:012082
ISSN:	1757-899X 1757-8981
Popis:	The technology of forming micro devices based on gallium nitride, including the main stages of manufacturing, namely, inter-assembly isolation, formation of non-straightening (ohmic) and straightening (Schottky barrier) contacts, surface passivation, formation of inter-electric connections in the form of “air bridges”, plate grinding, cutting plate into crystals and sorting out, is considered. A short technological cycle of manufacturing microstructures with a description of the main operations is given. As a result of this work, experimental samples of transistors with a gate length of 0.5 microns were obtained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c2bd2e597135f82d697b2306f29c5470 https://doi.org/10.1088/1757-899x/939/1/012082 Zobrazit plný text záznamu