Anomalous nanosecond transient component in a GaAs MODFET technology
| Autor: | R. Jaeger, J.S. Kofol, B.J.F. Lin, R.T. Kaneshiro, H. Luechinger, H. Rohdin, C.P. Kocot, E. Littau |
|---|---|
| Rok vydání: | 1988 |
| Předmět: |
Materials science
business.industry Time constant High-electron-mobility transistor Nanosecond Electronic Optical and Magnetic Materials Gallium arsenide Microsecond chemistry.chemical_compound chemistry Optoelectronics Field-effect transistor Transient response Transient (oscillation) Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 9:250-252 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.706 |
| Popis: | Modulation-doped field-effect transistors (MODFETs) exhibit transient responses that contain a variety of time constants. The strongest transients observed in the microsecond range are known to be caused by the DX centers. MODFETs also suffer a transient that arises from a source different from that of the DX centers. Preliminary measured characteristics of the nanosecond transient are presented, its effects on circuit performance are described, and its possible origin is inferred. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|