A thin film diamondp-channel field-effect transistor

Autor:	Simon S.M. Chan, Lisa Y.S. Pang, Richard B. Jackman, Paul R. Chalker, Colin Johnston
Rok vydání:	1997
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Transconductance Transistor Diamond Chemical vapor deposition engineering.material law.invention Thin-film transistor law engineering Optoelectronics Field-effect transistor Thin film business MISFET
Zdroj:	Applied Physics Letters. 70:339-341
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.118408
Popis:	A depletion-mode metal-insulator-semiconductor field-effect transistor has been fabricated from thin film polycrystalline diamond with a p-type (boron doped) channel and an insulating diamond gate. This device has been successfully operated at 300 °C displaying pinch off when in depletion and high levels of channel current modulation in enhancement. A transconductance value of 174 μS/mm has been measured, the highest reported value to date for this type of device.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c2a55e2fe27f829e72423651b643f77a https://doi.org/10.1063/1.118408 Zobrazit plný text záznamu