High positive magnetoresistance in Ge films at low temperatures
| Autor: | V.F. Mitin, V. V. Kholevchuk, E. A. Soloviev |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Colossal magnetoresistance
Materials science Physics and Astronomy (miscellaneous) Magnetoresistance Condensed matter physics 02 engineering and technology Atmospheric temperature range 021001 nanoscience & nanotechnology Thermal conduction 01 natural sciences Magnetic field Condensed Matter::Materials Science Electrical resistivity and conductivity 0103 physical sciences 010306 general physics 0210 nano-technology Wave function Quantum tunnelling |
| Zdroj: | Applied Physics Letters. 110:012102 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.4973494 |
| Popis: | High positive magnetoresistance is found and investigated in p-Ge films on GaAs at low temperatures (1.4–4.2 K) and in magnetic fields up to 14 T. The film resistance grows exponentially with magnetic field. At a temperature of 1.4 K and in a magnetic field of 14 T, the film resistance is increased by a factor of 3.8. The magnetoresistance also grows exponentially as temperature is reduced. The Mott variable-range hopping conduction is observed in the films studied in the 1.4–21 K temperature range. It is shown that experimentally observed magnetoresistance agrees well with the theory of compression of wave functions of the localized states in the plane normal to magnetic field. This results in reduction of their overlapping, decrease of electron tunneling probability, and consequently, considerable growth of film resistance. Based on experimental resistance dependences on temperature and magnetic field, the parameters of hopping resistivity in Ge films on GaAs are determined. A possibility of transition ... |
| Databáze: | OpenAIRE |
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