GaAs/AlGaAs structures with δ-doped layer for microwave detection
| Autor: | Aurimas Čerškus, Viktorija Kazlauskaitė, Hadas Shtrikmann, Jonas Gradauskas, Irina Papsujeva, Jurgis Kundrotas, A. Kozič, Gytis Steikūnas, Steponas Ašmontas, Valerij Petkun, Algirdas Sužiedėlis, T. Anbinderis, Vladimir Umansky, Aleksandras Narkūnas |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Doping Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound Planar chemistry Impurity Modulation Condensed Matter::Superconductivity Optoelectronics Condensed Matter::Strongly Correlated Electrons business Layer (electronics) Microwave Diode |
| Zdroj: | SPIE Proceedings. |
| ISSN: | 0277-786X |
| Popis: | Planar microwave detectors on the base of modulation doped AlGaAs/GaAs structures with d-doped layer were investigated in (26÷120) GHz frequency range. Comparison of the features of the microwave diodes on the base of modulation doped structures with d- and smoothly-distributed doping impurities in the AlGaAs barrier is presented. Influence of the layers composing the modulation doped structure onto detective properties of the microwave diodes is ascertained both theoretically and experimentally. In the case of the structure with d-doping this influence was less, especially, in the case of symmetrically shaped structure with n-n + and homogeneous asymmetrically shaped modulation doped structure. |
| Databáze: | OpenAIRE |
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