Peculiarities of graphene layer formation from amorphous carbon and silicon-carbon films

Autor:	G. S. Rychkov, E. Z. Khamdokhov, M. L. Shupegin, E. S. Chernyavskaya, E. P. Kirilenko, A. A. Shchekin, G. N. Petrukhin, O. A. Sakharov, E. A. Il’ichev
Rok vydání:	2014
Předmět:	Materials science Physics and Astronomy (miscellaneous) Silicon Graphene Carbon nanofiber chemistry.chemical_element Nanotechnology law.invention Carbon film Amorphous carbon Chemical engineering chemistry law Carbide-derived carbon Carbon Graphene nanoribbons
Zdroj:	Technical Physics Letters. 40:52-54
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785014010234
Popis:	Graphene layers on device structures have been formed from amorphous carbon and silicon-carbon films using a sequence of technological procedures, including thermodiffusion of carbon atoms, their accumulation at the heteroboundary between layers with significantly different diffusion coefficients, and subsequent phase transition from a carbon quasi-liquid to graphene layer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c281e8bc43be8e1a9a5a11e1bdf6e5a3 https://doi.org/10.1134/s1063785014010234 Zobrazit plný text záznamu Plný text ve formátu PDF