Effects of Collected Charge and Drain Area on SE Response of SRAMs at the 5-nm FinFET Node

Autor:	N.J. Pieper, Y. Xiong, D.R. Ball, J. Pasternak, B.L. Bhuva
Rok vydání:	2023
Zdroj:	2023 IEEE International Reliability Physics Symposium (IRPS).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c27899002f11c62fdc815cd7a28ecec6 https://doi.org/10.1109/irps48203.2023.10118115 Zobrazit plný text záznamu