Er3+ photoluminescence properties of erbium-doped Si/SiO2 superlattices with subnanometer thin Si layers

Autor:	Sehun Kim, Yong Ho Ha, Ji-Hong Jhe, Jung H. Shin, Dae Won Moon
Rok vydání:	2001
Předmět:	Erbium Photoluminescence Materials science Physics and Astronomy (miscellaneous) Silicon chemistry Superlattice Doping Monolayer Analytical chemistry chemistry.chemical_element Luminescence Order of magnitude
Zdroj:	Applied Physics Letters. 79:287-289
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1383802
Popis:	The effect of the Si layer thickness on the Er3+ photoluminescence properties of the Er-doped Si/SiO2 superlattice is investigated. We find that the Er3+ luminescence intensity increases by over an order of magnitude as the Si layer thickness is reduced from 3.6 nm down to a monolayer of Si. Temperature dependence of the Er3+ luminescence intensity and time-resolved measurement of Er3+ luminescence intensity identify the increase in the excitation rate as the likely cause for such an increase, and underscore the importance of the Si/SiO2 interface in determining the Er3+ luminescence properties.
Databáze:	OpenAIRE
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