Development of two-layered ReRAM using Ga-Sn-O thin film

Autor:	Ayata Kurasaki, Tokiyoshi Matsuda, Ryo Tanaka, Sumio Sugiski, Mutsumi Kimura
Rok vydání:	2019
Předmět:	010302 applied physics Materials science business.industry 0103 physical sciences Electrode Optoelectronics 02 engineering and technology Thin film 021001 nanoscience & nanotechnology 0210 nano-technology business 01 natural sciences Resistive random-access memory
Zdroj:	2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD).
DOI:	10.23919/am-fpd.2019.8830625
Popis:	We have studied Resistive Random Access Memory (ReRAM) using Ga-Sn-O (GTO) thin film. The device fabricated in this study has a sandwich structure in which two layers of GTO thin films with different resistance values are sandwiched between electrodes. From the current-voltage characteristics of the fabricated device, it was possible to confirm the function as memory even if writing and erasing are repeated 400 times.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c275f695b89a392c7682e9a1b35b6177 https://doi.org/10.23919/am-fpd.2019.8830625 Zobrazit plný text záznamu