Microstructural impact on electromigration: A TCAD study

Autor:	Roberto Lacerda de Orio, Siegfried Selberherr, Hajdin Ceric, W. H. Zisser
Rok vydání:	2014
Předmět:	Interconnection Materials science Ab initio Metal microstructure Electronic engineering General Earth and Planetary Sciences Predictive capability Statistical physics Microstructure Electromigration General Environmental Science
Zdroj:	Facta universitatis - series: Electronics and Energetics. 27:1-11
ISSN:	2217-5997 0353-3670
DOI:	10.2298/fuee1401001c
Popis:	Current electromigration models used for simulation and analysis of interconnect reliability lack the appropriate description of metal microstructure and consequently have a very limited predictive capability. Therefore, the main objective of our work was obtaining more sop histicated electromigration models. The problem is addressed through a combination of different levels of atomistic modeling and already available continuum level macroscopic models. A novel method for an ab initio calculation of the effective valence for electromigration is presented and its application on the analysis of EM behavior is demonstrated. Additionally, a simple analytical model for the early electromigration lifetime is obtained. We have shown that its application gives a reasonable estimate for the early electromigration failuresincluding the effect of microstructure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c26e9a51e9252d3f867a74d4eff61227 https://doi.org/10.2298/fuee1401001c Zobrazit plný text záznamu