Monolithic integration of a light‐emitting diode array and a silicon circuit using transfer processes
Autor: | Paul M. Zavracky, R.W. McClelland, John C. C. Fan, Mark B. Spitzer, B. D. Dingle |
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Rok vydání: | 1993 |
Předmět: | |
Zdroj: | Applied Physics Letters. 62:2760-2762 |
ISSN: | 1077-3118 0003-6951 |
DOI: | 10.1063/1.109252 |
Popis: | This letter reports the attainment of a monolithically integrated light‐emitting diode array on a silicon integrated circuit. The emitters are first formed epitaxially on a lattice‐matched substrate and are subsequently transferred to the silicon. Interconnections are made using thin‐film techniques between the 128 separately addressable light‐emitting diodes and the driver circuit. This work demonstrates attainment of a high level of optoelectronic/logic integration. |
Databáze: | OpenAIRE |
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