Investigation of Thermally Induced Threshold Voltage Shift in Normally-OFF p-GaN Gate HEMTs

Autor:	Huan Wang, Yan Lin, Junsong Jiang, Dan Dong, Fengwei Ji, Meng Zhang, Ming Jiang, Wei Gan, Hui Li, Maojun Wang, Jin Wei, Baikui Li, Xi Tang, Cungang Hu, Wenping Cao
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Transactions on Electron Devices. 69:2287-2292
ISSN:	1557-9646 0018-9383
DOI:	10.1109/ted.2022.3157805
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c2624ccbcb18757adf7888cc4435115c https://doi.org/10.1109/ted.2022.3157805 Zobrazit plný text záznamu