Mechanism of Threshold Voltage Shift (ΔVth) Caused by Negative Bias Temperature Instability (NBTI) in Deep Submicron pMOSFETs

Autor:	Klaus Schruefer, Anastasios A. Katsetos, Chih-Yung Lin, Terence B. Hook, Fu Tai Liou, Nivo Rovedo, Jen-Kon Chen, Zhijian Yang, Tze Chiang Chen, C.H. Liu, Ming T. Lee, Y.T. Loh, C. Wann
Rok vydání:	2002
Předmět:	Materials science Negative-bias temperature instability Physics and Astronomy (miscellaneous) business.industry General Engineering General Physics and Astronomy Optoelectronics Dielectric business Mechanism (sociology) Degradation (telecommunications) Threshold voltage
Zdroj:	Japanese Journal of Applied Physics. 41:2423-2425
ISSN:	1347-4065 0021-4922
Popis:	The physical mechanism responsible for negative bias temperature instability (NBTI), which is basic to the minimization of this degradation mode, is investigated, and an analytical model is developed accordingly. Experiments with 1.7 nm to 3.3 nm gate dielectrics fabricated by different processes demonstrate the capability of the proposed model.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c2606692d36ef765152781bec0b39c8d https://doi.org/10.1143/jjap.41.2423 Zobrazit plný text záznamu