| Autor: |
Alexander Satka, M. Blah, Daniel Donoval, M. Vilhan, Lukas Nagy, J. Priesol, Dagmar Gregušová, Ales Chvala, Jan Kuzmik, Juraj Marek |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 12th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM). |
| DOI: |
10.1109/asdam.2018.8544508 |
| Popis: |
This paper presents simulation analysis of monolithic integrated InAlN/GaN NAND logic cell comprised of depletion-mode and dual-gate enhancement-mode high electron mobility transistors. Calibrated static and dynamic electrophysical models are proposed for 2-D device simulations in Sentaurus Device environment. Circuit models of both transistors are designed and calibrated by experimental results and 2-D device simulations. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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