The crystallization and dielectric tunability of Zn doped Na0.5Bi0.5TiO3 thin films
| Autor: | Li Shuxin, C.H. Yang, Du Xiongbin, Yajie Han, Jin Qian, Fangying Jiao, Hu Xueqing |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Annealing (metallurgy) 02 engineering and technology Dielectric 01 natural sciences law.invention Metal law Electric field 0103 physical sciences Materials Chemistry Crystallization Thin film 010302 applied physics business.industry Process Chemistry and Technology Doping 021001 nanoscience & nanotechnology Surfaces Coatings and Films Electronic Optical and Magnetic Materials Indium tin oxide visual_art Ceramics and Composites visual_art.visual_art_medium Optoelectronics 0210 nano-technology business |
| Zdroj: | Ceramics International. 42:976-981 |
| ISSN: | 0272-8842 |
| DOI: | 10.1016/j.ceramint.2015.08.110 |
| Popis: | Na0.5Bi0.5Ti1−xZnxO3−δ (NBTZnx, x=0.005–0.04) thin films were deposited on indium tin oxide coated glass substrates by metal organic decomposition combined with sequential layer annealing. The effects of Zn2+ doping content on crystallization and dielectric tunability were mainly studied. All the thin films crystallize into a single perovskite structure with random orientation. Compared with the other films, the NBTZn0.01 film exhibits a high dielectric constant and strong nonlinear dependence of the dielectric constant on applied field due to its well-crystallization and high densification. Furthermore, the effects of the electric field and frequency on the dielectric constant-electric field characteristic for NBTZn0.01 film are discussed. The results show that NBTZn0.01 thin film with an enhanced dielectric tunability of 39% can be a lead-free candidate for tunable component. |
| Databáze: | OpenAIRE |
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