Sensitive polysulfone based chain scissioning resists for 193nm lithography

Autor:	Warren Montgomery, Andrew K. Whittaker, Idriss Blakey, Anneke Dorgelo, Neal Lafferty, Bruce W. Smith, Yong Keng Goh, Lan Chen, Paul Zimmerman, Xie Peng
Rok vydání:	2011
Předmět:	inorganic chemicals chemistry.chemical_classification Materials science Depolymerization macromolecular substances Polymer Photochemistry environment and public health chemistry.chemical_compound chemistry Resist Photoacid Multiple patterning Enhanced sensitivity Polysulfone Lithography
Zdroj:	SPIE Proceedings.
ISSN:	0277-786X
DOI:	10.1117/12.881700
Popis:	Chain scissioning resists do not require addition of photoacid generators to function. Previously reported chain scissioning polysulfone resists were able to achieve enhanced sensitivity by incorporation of absorbing repeat units, but these groups also inhibited the depolymerization reaction, which could further enhance sensitivity. Here we report the development of sensitive polysulfone chain scissioning resists for 193 nm that are able to undergo depolymerization. The effect of depolymerization of LER is also discussed. These polymers underwent CD shrinkage upon overdose, which may be useful for double patterning processes.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c2539745aab8867be3e5b3f8b518ed9f https://doi.org/10.1117/12.881700 Zobrazit plný text záznamu