Transport properties in Nd1.85Ce0.15CuO4single crystals under different annealing conditions
| Autor: | Lu Cheng, Cheng Hai Sun, Jian Liu, Hongshun Yang, Yisheng Chai, Lie Zhao Cao, Hui Xian Gao, Jian Bin Wang |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Condensed matter physics Annealing (metallurgy) Doping Metals and Alloys Atmospheric temperature range Condensed Matter Physics Thermal conductivity Electrical resistivity and conductivity Seebeck coefficient Materials Chemistry Ceramics and Composites Charge carrier Electrical and Electronic Engineering Single crystal |
| Zdroj: | Superconductor Science and Technology. 22:015013 |
| ISSN: | 1361-6668 0953-2048 |
| DOI: | 10.1088/0953-2048/22/1/015013 |
| Popis: | The transport properties, thermopower (TEP), thermal conductivity (κ) and resistivity (ρ) are investigated for the optimally doped (x = 0.15) Nd1−xCexCuO4 (NCCO) single crystal, after annealing in flowing nitrogen at 900 °C for different times. Both TEP and ρ are interpreted in a two-band model with an electron broad band and a hole-like narrow band. After suitable annealing, the bandwidth (Γ) of the narrow band decreases abruptly, resulting in an anomalous change of TEP at 300 K. At the same time, κ increases considerably because of the increasing thermal conductivity of charge carriers, and a peak emerges around 75 K, due to the interaction between carriers and phonons. |
| Databáze: | OpenAIRE |
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