| Autor: |
Ming Lin Julius Tsai, Lionel Y.L. Wong, Lynn Khine, Jeffrey B.W. Soon |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
Advanced Materials Research. 254:70-73 |
| ISSN: |
1662-8985 |
| DOI: |
10.4028/www.scientific.net/amr.254.70 |
| Popis: |
Film Bulk Acoustic Wave Resonators (FBAR) at 2.6GHz using AlN piezoelectric material have been fabricated and characterized in this work. A stack of Al bottom electrode, AlN layer and top Al electrode is used to excite the thickness extensional (TE) vibration mode. The FBAR resonator has a quality factor of about 400 and the piezoelectric coupling coefficient of 4.25%, which is critical for RF filter implementation. Moreover, FBAR resonator has been designed to suppress spurious modes in order to ensure higher quality factor. Different filter topologies of ladder/lattice architecture are then explored for effective implementation using several FBAR resonators to build band-pass RF filters. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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