Efficient Electron Beam Crystallised Large Grained Silicon Solar Cells on Glass Substrates
| Autor: | Amkreutz, D., Müller, J., Schmidt, M., Schulze, T.F., Hänel, T., Haschke, J. |
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| Jazyk: | angličtina |
| Rok vydání: | 2010 |
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| DOI: | 10.4229/25theupvsec2010-3co.15.3 |
| Popis: | 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 2832-2836 Past EUPVSEC, we presented our results concerning electron beam crystallized silicon thin film solar cells on glass. The liquid phase crystallization process lead to grain sizes between several 100μm up to cm in length. To provide necessary absorber doping, an amorphous intermediate layer of amorphous, boron doped silicon carbide is deposited by sputtering on top of the pre-cleaned glass substrates. This layer full fills the function of a diffusion barrier against the incorporation of residual impurities of the glass as well as a wetting agent for the liquid silicon to prevent balling up. A higher purity of the used SiC-Target together with a reduced level of dopands, an absorber Doping level NA of about 1016cm-3 could be realised, marking an ideal value for the given cell geometry. By combining these polycrystalline silicon absorbers with an n-type amorphous hydrogenated silicon emitter, current cells achieved open circuit voltages of up to 545mV as well as fill factors of 74% without any H2-passivation steps nor defect annealing. This corresponds to an increase of Voc of 58mV compared to earlier cells with an absorber dopant level NA of 1018 cm-3. The comparable short circuit current density of -12mA cm-2 indicates the need of an effective light management concept for these cells, of which first results are presented. |
| Databáze: | OpenAIRE |
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