Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band

Autor:	H. Schumacher, H. Tobler, Martin Neuburger, R.H. Jansen, R. Behtash, Volker Ziegler, Dimitris Pavlidis, Helmut Leier, Trevor Martin, F.-J. Berlec, R.S. Balmer, B. Adelseck
Rok vydání:	2004
Předmět:	Power-added efficiency Materials science business.industry Amplifier RF power amplifier Biasing Gallium nitride High-electron-mobility transistor chemistry.chemical_compound chemistry Optoelectronics business Monolithic microwave integrated circuit Power density
Zdroj:	2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).
DOI:	10.1109/mwsym.2004.1338904
Popis:	A power amplifier MMIC based on AlGaN/GaN HEMTs was fabricated and measured. The coplanar balanced amplifier consists of two 8/spl times/100/spl mu/m transistors. Wilkinson splitters were used to divide and combine the power. BY biasing the amplifier at V/sub DS/=30V a maximum CW output power of 39dBm corresponding to 5W/mm with a maximum power added efficiency (PAE) of 33.8% was achieved at 10GHz. Biasing the amplifier at V/sub DS/=20V resulted in 36.7% PAE with 37.2dBm CW output power at 10GHz. To the author's knowledge these results represent the highest output power density so far achieved for GaN-based MMICs at X-band in CW mode.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c217f2593ae3e3ab2b3011fdedfc35a4 https://doi.org/10.1109/mwsym.2004.1338904 Zobrazit plný text záznamu