Low-voltage organic transistor with subfemtoliter inkjet source-drain contacts

Autor:	Yu Kato, Tomoyuki Yokota, Takao Someya, Kazuo Takimiya, Hirokazu Kuwabara, Hagen Klauk, Tsuyoshi Sekitani, Masaaki Ikeda, Tatsuya Yamamoto, Ute Zschieschang, Kazunori Kuribara
Rok vydání:	2011
Předmět:	Materials science business.industry Transconductance Transistor Nozzle Sintering Nanotechnology law.invention Organic semiconductor law Electrode Monolayer Optoelectronics General Materials Science business Low voltage
Zdroj:	MRS Communications. 1:3-6
ISSN:	2159-6867 2159-6859
DOI:	10.1557/mrc.2011.4
Popis:	We have successfully achieved a transconductance of 0.76 S/m for organic thin-film transistors with 4 V operation, which is the largest value reported for organic transistors fabricated using printing methods. Using a subfemtoliter inkjet, silver electrodes with a line width of 1 µm and a channel length of 1 µm were printed directly onto an air-stable, high-mobility organic semiconductor that was deposited on a singlemolecule self-assembled monolayer-based gatedielectric. Onreducingthe droplet volume(0.5 fl) ejectedfromthe inkjet nozzle,which reduces sintering temperatures down to 90 °C, the inkjet printing of silver electrodes was accomplished without damage to the organic semiconductor.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c2146e42f89397daa0acf1078ba32708 https://doi.org/10.1557/mrc.2011.4 Zobrazit plný text záznamu