Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiC x Passivating Contacts

Autor: Quentin Jeangros, Monica Morales-Masis, Franz-Josef Haug, Esteban Rucavado, Christophe Ballif, Philippe Wyss, Gizem Nogay, Andrea Ingenito, Philipp Löper, Josua Stuckelberger
Rok vydání: 2018
Předmět:
Zdroj: IEEE Journal of Photovoltaics. 8:1478-1485
ISSN: 2156-3403
2156-3381
DOI: 10.1109/jphotov.2018.2866189
Popis: We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiO x and overlying in-situ doped silicon carbide (SiC x ) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 °C, excellent surface passivation on the p -type planar crystalline silicon wafer is obtained for both electron- and hole-selective contacts. Their potential is demonstrated at the device level by employing a simple process flow, in which the junction formation of the two polarities is achieved with a single coannealing step. Both-side-contacted patterning-free planar p -type cells with an area of 4 cm2 and screen-printed metallization reach a fill factor of 83.4% and a open-circuit voltage of 726 mV. Zirconium-doped indium oxide with excellent optoelectrical properties is used as a front electrode. The decrease in the parasitic absorption in the front electrode results in higher photogenerated current. By realizing front-side-textured and rear-side-planar p -type cells, an efficiency of up to 22.6% is achieved.
Databáze: OpenAIRE