XPS and AES study of reactive TiSi interface

Autor:	V. Makhnjuk, A. I. Senkevich, A. P. Shpak, E. Buzaneva, V.I. Strikha, T. Vdovenkova, S. Litvinenko, V. V. Nemoshkalenko, V. Skryshevsky, P. Shevchuk
Rok vydání:	1994
Předmět:	Radiation Silicon Annealing (metallurgy) chemistry.chemical_element Condensed Matter Physics Chemical reaction Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Metal chemistry X-ray photoelectron spectroscopy Chemical engineering Transition metal Aluminium visual_art visual_art.visual_art_medium Physical and Theoretical Chemistry Spectroscopy Titanium Nuclear chemistry
Zdroj:	Journal of Electron Spectroscopy and Related Phenomena. 68:707-711
ISSN:	0368-2048
DOI:	10.1016/0368-2048(94)02178-3
Popis:	The influence of chemically active metal Al deposition on Ti - oxidized silicon interface at 300–430 C has been studied. The results of TiSi interface investigation after Al deposition on Ti layer and following annealing are compared with the conclusions of thermodynamical estimates of reaction probabilities in TiSi, TiSiO2, AlSiO2, AlTiO2 systems.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c1fb47ae671e1d016a5d73f988681187 https://doi.org/10.1016/0368-2048(94)02178-3 Zobrazit plný text záznamu