Raman study of the topology of InAs/GaAs self-assembled quantum dots
| Autor: | J. C. Galzerani, N. T. Moshegov, G. Zanelatto, A. I. Toropov, Yu. A. Pusep, P. Basmaji |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Coalescence (physics)
business.industry Chemistry General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Topology Self assembled Gallium arsenide Condensed Matter::Materials Science symbols.namesake chemistry.chemical_compound Semiconductor quantum dots Quantum dot Monolayer symbols Optoelectronics business Raman spectroscopy Raman scattering |
| Zdroj: | Journal of Applied Physics. 86:4387-4389 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | The topology of self-assembled InAs/GaAs quantum dots was studied by resonant Raman scattering caused by the interface modes localized near the edges of the dots. Evidences were found that on both sides of the InAs layer containing the dots, their topologies show some resemblances. In addition, in the multilayered systems the evidence of the coalescence of the dots (which form vertical columns) in neighbor layers separated by the distance smaller than 25 monolayers was obtained. |
| Databáze: | OpenAIRE |
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