Point Defects in Silicon Carbide for Quantum Technology

Autor:	Adam Gali, András Csóré
Rok vydání:	2021
Předmět:	Quantum technology chemistry.chemical_compound Materials science chemistry business.industry Silicon carbide Optoelectronics business Crystallographic defect
Zdroj:	Wide Bandgap Semiconductors for Power Electronics. :503-528
DOI:	10.1002/9783527824724.ch17
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::c1ebff9a34107cf67a6c9eb9a991f89d https://doi.org/10.1002/9783527824724.ch17 Zobrazit plný text záznamu