A new type of SRAM using DRAM technology
| Autor: | Tsutomu Yoshihara, Yuji Kihara, Yasushi Nakashima, Leona Okamura, Masayuki Nakamoto, Takashi Izutsu |
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| Rok vydání: | 2007 |
| Předmět: |
Engineering
Hardware_MEMORYSTRUCTURES Computer Networks and Communications business.industry General Physics and Astronomy Cell technology Memory cell Asynchronous communication Universal memory Electronic engineering Miniaturization Static random-access memory Electrical and Electronic Engineering business Dram Dram memory |
| Zdroj: | Electronics and Communications in Japan (Part II: Electronics). 90:32-41 |
| ISSN: | 1520-6432 8756-663X |
| DOI: | 10.1002/ecjb.20330 |
| Popis: | 16-Mbit low-power SRAM (SuperSRAM) was developed using a new memory cell technology which makes use of DRAM technology and TFT technology, which has a record of actual performance in SRAM. For SRAM, the problems of soft errors and operation at the lower limits of Vcc have manifested at the increasing levels of miniaturization, and increases in capacity have become increasingly difficult. Nonetheless, complete compatibility with asynchronous SRAM has been implemented with the free use of circuit technology, while various problems have been resolved without cost increases using DRAM memory cell technology, which reduces surface area. The characteristics of such devices are discussed predominantly from the perspective of design. © 2007 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 90(9): 32–41, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.20330 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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