Gauge control for sub-170-nm DRAM product features

Autor: Neal Lafferty, Christopher J. Raymond, Christopher Gould, Michael E. Littau
Rok vydání: 2001
Předmět:
Zdroj: SPIE Proceedings.
ISSN: 0277-786X
DOI: 10.1117/12.436754
Popis: As modern circuit architecture features steadily decrease in size, more accurate tools are needed to meaningfully measure critical dimensions (CD). As a general rule, a metrology tool should be able to measure 1/10 of the product tolerance. As CD's continue to shrink, gauge control becomes more relevant. The trend is illustrated in Table 1. The standard in-line critical dimension measurement tool is the top-down scanning electron microscope (SEM). An emergine technology for high speed, high accuracy CD measurement is scatterometry. This paper will compare the two technologies for in-line CD measurement for three applications: A product etch step (assessing gauge capability as well as trending), a product resist step (trending), and lithographic cell monitors (trending).
Databáze: OpenAIRE